• Customized Bridgman Growing System for Metal Semiconductor Single Crystal
  • Customized Bridgman Growing System for Metal Semiconductor Single Crystal
  • Customized Bridgman Growing System for Metal Semiconductor Single Crystal

Customized Bridgman Growing System for Metal Semiconductor Single Crystal

Application: School, Lab
Customized: Customized
Certification: CE, TUV
Structure: Desktop
Material: Steel
Type: Tubular Furnace
Customization:
Diamond Member Since 2016

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Basic Info.

Model NO.
EQ-SKJ-BG
Max. Working Temperature
1650c
Power
9.5kw
Flange
Stainless Steel
Processing Tube
Alumina Tube
Thermocouple
B Type
Travel Speed
0.03-3 mm/Hr
Warranty
One Year
Transport Package
Wooden Box
Specification
dia. 40mm
Trademark
CY
Origin
Zhengzhou, China
HS Code
85141090
Production Capacity
230 Sets Per Month

Product Description

1650C Bridgman Furnace for Directional Solidification of Polycrystalline Ingots - EQ-SKJ-BG1650-LD
EQ-SKJ-BG1650 is a 1650C max. Bridgman furnace for directional solidification of Polycrystalline Ingots upto 37mm diamerter. Three individual controlled heating modules & speed adjustable cooling fans at furance exit provide advantages to create larger temp. gradient at the melt/crystal interface as needed. Automatic crucible retrieving system enables the most convenient way for sample loading/unloading. Optional crucible rotation stage can be added at additional cost for single crystal ingot growth.

 
Advanced Features

      
Three stacked heating modules with independent temperature measurement and control enable the flexibility of creating various temperature gradients along the length of the heated area;
Two speed adjustable cooling fans with TC at the exit of the furnace allow the better control over the temperature gradient at the melt/crystal interface; 
φ42mm Alumina sample pulling stage with TC attachment for accurate temperature monitoring of the crucible on top and generate instant temperature plot;
Electric elevated crucible stage enable an automatic and convenient sample loading / retrieving;
Power Requirements 220VAC single phase 50/60Hz
9.5KW
Working Temperature  Heating Element: Silicon molybdenum rod
Max. Working Temperature: 1650°C ( <1hr)
Continuous Operating Temperature: 1600°C
 Processing Tube & Flange High purity alumina furnace tube, Size: φ80mm O.D. x 1000mm L
A pair of stainless steel flange is connected to both end of the processing tube which allows for inert gas purging or vacuum during the crystal growing proces
Sample Stage φ42X40mm H Alumina Sample Stage
B type thermocouple insert from the bottom of the sample stage for accurate temperature measurement of the crucible
Crucible Retrieving Mechanism Automatic sample retrieving system for easy crucible loading / unloading, 
700mm max. travel distance
 Heating Zones Three heating zones with independent temperature measurement and control
Three zones: 300mm (12") long in total
100mm long for each zone   
Temperature Control
     
Three PID temp. controller with 30 programmable segments for precise control of heating, cooling rate and dwell time.
Built-in overheating & broken thermocouple protection.
European Temperature controller, with +/- 0.1 ºC temperature accuracy.
Three B type thermocouples (one for each zone).
Cooling Fans One speed adjustable cooling fans are installed at the bottom exit of the furnace
 Furnace Travel Distance & Speed As the furnace heater moves upward, the crucible is moving toward the bottom exit of the furnace where the lower temperature is seen. 
The maximum travel distance of the furnace heater is 200 mm. 
Travel speed: 0.03-3 mm/hr
 Vacuum Pump (Not included) 10E-2 torr via dual stage mechanical vacuum pump
10E-5 torr via Turbo pump
The vacuum pump is optional.
Dimension
    
Controller stage: 860mm L x 600mm W x 1220mm H
Furnace stage: 1170mm L X 910mm W X 2500mm H

Customized Bridgman Growing System for Metal Semiconductor Single Crystal
Customized Bridgman Growing System for Metal Semiconductor Single Crystal
Customized Bridgman Growing System for Metal Semiconductor Single Crystal
Customized Bridgman Growing System for Metal Semiconductor Single Crystal


 

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