| Customization: | Available |
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| After-sales Service: | Online Support |
| Warranty: | 1 Year |
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Chemical vapor deposition adopts plasma enhanced chemical vapor deposition technology, which can use high-energy plasma to promote the reaction process, effectively increase the reaction speed and reduce the reaction temperature.
It is suitable for depositing thin films of silicon nitride, amorphous silicon and microcrystalline silicon on different substrates such as optical glass, silicon, quartz and stainless steel. It has good film-forming quality, less pinholes and is not easy to crack. It is suitable for the preparation of amorphous silicon and microcrystalline silicon thin film solar cell devices. It can be widely used in the scientific research and small batch preparation of thin film materials in Colleges and universities and scientific research institutes.
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RF power supply |
Signal frequency |
13.56MHz |
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Power output range |
0~500W |
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Maximum reflected power |
100W |
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Reflected power (at maximum power) |
<5W |
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Power stability |
±0.1% |
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Working Chamber |
Heating temperature |
RT-1000ºC |
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Temperature control accuracy |
±1ºC |
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Sample holder |
Φ200mm |
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Rotating speed of sample holder |
1-20rpm adjustable |
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Spray head size |
Φ90mm |
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Distance |
The distance between the spray head and the sample is 40-100mm continuously adjustable |
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Working vacuum for deposition |
0. 133- 133Pa (can be adjusted according to the technical process) |
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Flange |
The top flange can be lifted by the motor, the substrate is easy to change, and there is a visual window |
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Chamber |
Stainless steel material, Φ500mm * 500mm |
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Observation window |
Φ100mm, with baffle |
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Gas supply system |
Channel numbers |
6 |
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Measuring unit |
Mass flow controller |
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Measuring range |
A channel: 0~200SCCM for H2 |
Remarks: If other ranges are required, please specify when ordering. According to the customer's specific requirements, the flow meter of corresponding gas type and range is optional. |
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B channel: 0~200SCCM for CH4 |
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C channel: 0~200SCCM for C2H4 |
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C channel: 0~500SCCM for N2 |
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D channel: 0~500SCCM for NH3 |
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E channel: 0~500SCCM for Ar |
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Measurement accuracy |
±1.5%F.S |
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Working pressure difference |
-0.15Mpa~0.15Mpa |
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Connecting pipe |
304 stainless steel |
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Gas channel |
304 stainless steel needle valve |
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Interface specification |
1/4" ferrule connector for gas inlet and outlet |
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Vacuum system |
Backing pump |
4.7L/s |
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Molecular pump |
1200L/s |
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Vacuum measurement |
Compound vacuum gauge, range 10-5Pa ~ 105Pa |
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Vacuum degree |
5.0*10-3Pa |
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Water chiller |
Cooling water temperature |
<=37ºC |
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Water flow |
10L/min |
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Power |
0.1KW |
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Cooling power |
50W/ºC |
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Power supply |
AC220V 50Hz |
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